Room‐Temperature Charge‐to‐Spin Conversion from Quasi‐2D Electron Gas at SrTiO₃‐Based Interfaces

Two dimensional electron gas at oxide interfaces

Spin-polarized two-dimensional electron gas at oxide interfaces.

The possibility of formation of a fully spin-polarized 2D electron gas at the SrMnO_3/(LaMnO_3)_1/SrMnO_3 heterostructure is predicted from density-functional calculations. The La(d) electrons become confined in the direction normal to the interface in the electrostatic potential well of the positively charged layer of La atoms, acting as electron donors. These electrons mediate a ferromagnetic...

Electron Gases at Oxide Interfaces

1027 Abstract Two-dimensional electron gases (2DEGs) based on conventional semiconductors such as Si or GaAs have played a pivotal role in fundamental science and technology. The high mobilities achieved in 2DEGs enabled the discovery of the integer and fractional quantum Hall effects and are exploited in high-electron-mobility transistors. Recent work has shown that 2DEGs can also exist at oxi...

Gas enrichment at liquid-wall interfaces.

Molecular dynamics simulations of Lennard-Jones systems are performed to study the effects of dissolved gas on liquid-wall and liquid-gas interfaces. Gas enrichment at walls, which for hydrophobic walls can exceed more than 2 orders of magnitude when compared to the gas density in the bulk liquid, is observed. As a consequence, the liquid structure close to the wall is considerably modified, le...

Prediction of a switchable two-dimensional electron gas at ferroelectric oxide interfaces.

The demonstration of a quasi-two-dimensional electron gas (2DEG) in LaAlO3/SrTiO3 heterostructures has stimulated intense research activity in recent years. The 2DEG has unique properties that are promising for applications in all-oxide electronic devices. For such applications it is desirable to have the ability to control 2DEG properties by external stimulus. Here, based on first-principles c...